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| BCP28, BCP48 PNP Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCP29/49 (NPN) 4 Type BCP28 BCP48 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) RthJS 3 2 C(2,4) B(1) 1 VPS05163 E(3) EHA00008 Marking BCP 28 BCP 48 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCEO VCBO VEBO BCP28 30 40 10 BCP48 60 80 10 Unit V IC ICM IB IBM Ptot Tj Tstg 500 800 100 200 1.5 150 -65 ... 150 mA mA W C 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BCP28, BCP48 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 VCB = 60 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 C VCB = 60 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 A, VCE = 1 V DC current gain 1) IC = 10 mA, VCE = 5 V hFE ICBO V(BR)CEO Symbol min. Values typ. max. Unit V 30 60 nA 100 100 A 10 10 100 nA 4000 2000 - BCP28 BCP48 V(BR)CBO BCP28 BCP48 V(BR)EBO 40 80 10 BCP28 BCP48 ICBO BCP28 BCP48 IEBO BCP28 BCP48 hFE BCP28 BCP48 hFE 10000 4000 20000 10000 hFE DC current gain 1) IC = 100 mA, VCE = 5 V BCP28 BCP48 DC current gain 1) IC = 500 mA, VCE = 5 V BCP28 BCP48 4000 2000 1) Pulse test: t 300s, D = 2% 2 Nov-29-2001 BCP28, BCP48 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. DC Characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 8 fT 200 VBEsat 1.5 VCEsat 1 typ. max. Unit V MHz pF 1) Pulse test: t 300s, D = 2% 3 Nov-29-2001 BCP28, BCP48 Total power dissipation Ptot = f(TS) Collector cutoff current ICBO = f (T A) VCB = V CEmax 10 4 BCP 28/48 EHP00242 1650 mW CBO 1350 1200 nA max 10 3 P tot 1050 900 750 600 450 300 150 0 0 10 2 typ 10 1 10 0 15 30 45 60 75 90 105 120 C 150 TS 0 50 100 C TA 150 Transition frequency fT = f (IC) VCE = 5V 10 3 MHz fT BCP 28/48 EHP00243 Permissible pulse load Ptotmax / PtotDC = f (tp) 10 3 Ptot max 5 Ptot DC BCP 28/48 EHP00244 D= tp T tp T 10 2 5 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 10 1 10 2 mA 10 3 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 C 4 Nov-29-2001 BCP28, BCP48 DC current gain hFE = f (IC ) VCE = 5V 10 6 h FE 5 BCP 28/48 EHP00246 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 1000 10 3 BCP 28/48 EHP00247 C mA 150 C 25 C -50 C 10 5 5 125 C 25 C 10 2 5 -55 C 10 4 5 10 1 5 10 3 10 -1 10 0 10 1 10 2 mA 10 3 10 0 0 0.5 1.0 V V CEsat 1.5 C Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO ) 10 CEB0 (CCB0 ) BCP 28/48 EHP00248 Base-emitter saturation voltage IC = f (VBEsat), hFE = 1000 10 3 BCP 28/48 EHP00249 pF C mA 150 C 25 C -50 C 10 2 CCB0 5 CEB0 5 10 1 5 0 10 -1 10 0 V 10 1 V EB0 (V CB0 ) 10 0 0 1.0 2.0 V V BEsat 3.0 5 Nov-29-2001 |
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